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Understanding the Space-Charge Layer in SnO2 for Enhanced Electron Extraction in Hybrid Perovskite Solar Cells

Title
Understanding the Space-Charge Layer in SnO2 for Enhanced Electron Extraction in Hybrid Perovskite Solar Cells
Authors
Youn, Sarah Su-OKim, JihyunNa, JunhongJo, WilliamKim, Gee Yeong
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2022
Journal Title
ACS APPLIED MATERIALS & INTERFACES
ISSN
1944-8244JCR Link

1944-8252JCR Link
Citation
ACS APPLIED MATERIALS & INTERFACES vol. 14, no. 42, pp. 48229 - 48239
Keywords
space-charge layerelectron depletionSnO2ITOinterfacelead halide perovskiteperovskite solar cell
Publisher
AMER CHEMICAL SOC
Indexed
SCIE; SCOPUS WOS
Document Type
Article
Abstract
Tin oxide (SnO2) has been widely used as an n-type metal oxide electron transport layer in perovskite solar cells (PSCs) owing to its superior electrical and optical properties and low-temperature synthesis process. In particular, the interfacial effect between indium tin oxide (ITO) and SnO2 is an important parameter that controls the charge transport properties and device performance of the PSCs. Therefore, understanding the interfacial effect of ITO/SnO2 and its role in PSCs is crucial, but it is not studied intensively. Herein, we investigated the space-charge effect at the interface of ITO/SnO2 using transfer length measurement and conductive atomic force microscopy as a function of SnO2 thickness. Moreover, optical, morphologic, and device measurements were performed to determine the optimal SnO2 thickness for PSCs. The space-charge effect was identified in ITO/SnO2 when the SnO2 layer was very thin due to electron depletion near the interface. Interestingly, a critical kink point was observed at approximately 10 nm SnO2 thickness, indicating the electron depletion and weak charge transfer behavior of the device. Thus, a thickness around 20 nm was favorable for the best PSC performance because charge transport behavior in the thin SnO2 layer was depressed by electron depletion. However, when the thickness of SnO2 exceeded 50 nm, the device performance deteriorated due to increased series resistance. This study provides a strategy to tune the electron transport layer and boost the charge transport behavior in PSCs, making important contributions to optimizing SnO2-based PSCs.
DOI
10.1021/acsami.2c12461
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자연과학대학 > 물리학전공 > Journal papers
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