Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박성민 | * |
dc.contributor.author | 김지훈 | * |
dc.date.accessioned | 2020-04-06T16:30:11Z | - |
dc.date.available | 2020-04-06T16:30:11Z | - |
dc.date.issued | 2020 | * |
dc.identifier.issn | 1598-1657 | * |
dc.identifier.issn | 2233-4866 | * |
dc.identifier.other | OAK-26664 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/253732 | - |
dc.description.abstract | This paper presents a novel bootstrapped fully differential CMOS transimpedance amplifier (BFD-TIA) for the applications of unmanned vehicle LiDAR systems. In particular, the mirrored-cascode input stage is proposed to create a fully differential input configuration, which consists of a cascode input stage and its mirrored differential stage by passing the inverted output at the drain node of the common-source transistor over to the gate of the mirrored differential stage through an AC-coupling capacitor. Also, bootstrapping technique is exploited to reduce the direct effect of the notorious photodiode capacitance upon the bandwidth and noise performance in a typical voltage-mode TIA. Test chips of the proposed BFD-TIA were implemented by using a 0.13-mu m CMOS technology. Measured results demonstrate 86-dBO transimpedance gain, 500-Mb/s operation speed for a 0.5-pF photodiode capacitance, 7.5-pA/sqrt( Hz) average noise current spectral density, and 24-mW power consumption from a single 1.2-V supply. Chip core occupies the area of 0.022 mm(2). | * |
dc.language | English | * |
dc.publisher | IEEK PUBLICATION CENTER | * |
dc.subject | Bootstrap | * |
dc.subject | CMOS | * |
dc.subject | fully differential | * |
dc.subject | mirrored-cascode | * |
dc.subject | TIA | * |
dc.title | Bootstrapped Fully Differential CMOS Transimpedance Amplifier | * |
dc.type | Article | * |
dc.relation.issue | 1 | * |
dc.relation.volume | 20 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.index | KCI | * |
dc.relation.startpage | 1 | * |
dc.relation.lastpage | 7 | * |
dc.relation.journaltitle | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | * |
dc.identifier.doi | 10.5573/JSTS.2020.20.1.001 | * |
dc.identifier.wosid | WOS:000517825600001 | * |
dc.author.google | Park, Yoonji | * |
dc.author.google | Kim, Ji-Hoon | * |
dc.author.google | Park, Sung Min | * |
dc.contributor.scopusid | 박성민(7501832231) | * |
dc.contributor.scopusid | 김지훈(57214339649) | * |
dc.date.modifydate | 20240322125443 | * |