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dc.contributor.author김동하*
dc.contributor.author김동욱*
dc.date.accessioned2019-12-03T16:30:36Z-
dc.date.available2019-12-03T16:30:36Z-
dc.date.issued2019*
dc.identifier.issn2040-3364*
dc.identifier.issn2040-3372*
dc.identifier.otherOAK-26134*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/252338-
dc.description.abstractDesigning an efficient and stable hole transport layer (HTL) material is one of the essential ways to improve the performance of organic-inorganic perovskite solar cells (PSCs). Herein, for the first time, an efficient model of a hole transport material (HTM) is demonstrated by optimized doping of a conjugated polymer TFB (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)]) with a non-hygroscopic p-type dopant F4-TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane) for high-efficiency PSCs. The PSC with the F4-TCNQ doped TFB exhibits the best power conversion efficiency (PCE) of 17.46%, which surpasses that of the reference devices, i.e., 16.64 (LiTFSI + TBP-doped Spiro-OMeTAD as the HTM) and 11.01% (LiTFSI + TBP-doped TFB as the HTM). F4-TCNQ doped TFB was believed to favor efficient charge and energy transfer between the perovskite and the hole transport layer and to reduce charge recombination as evidenced by steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL) analysis. Moreover, the hydrophobic nature of F4-TCNQ contributed to enhancing the stability of the device under ambient conditions with a RH of 45%. The device reported herein retained ca. 80% of its initial efficiency after 10 days, significantly superior to both LiTFSI + TBP-doped Spiro-OMeTAD (ca. 30%) and LiTFSI + TBP-doped TFB (ca. 10%) based counterparts. This simple yet novel strategy paves the way for demonstrating a promising route for a wide range of highly efficient solar cells and other photovoltaic applications.*
dc.languageEnglish*
dc.publisherROYAL SOC CHEMISTRY*
dc.titleTowards efficient and stable perovskite solar cells employing non-hygroscopic F4-TCNQ doped TFB as the hole-transporting material*
dc.typeArticle*
dc.relation.issue41*
dc.relation.volume11*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage19586*
dc.relation.lastpage19594*
dc.relation.journaltitleNANOSCALE*
dc.identifier.doi10.1039/c9nr05719f*
dc.identifier.wosidWOS:000498821300058*
dc.identifier.scopusid2-s2.0-85074118902*
dc.author.googleKwon, Hannah*
dc.author.googleLim, Ju Won*
dc.author.googleHan, Jinyoung*
dc.author.googleQuan, Li Na*
dc.author.googleKim, Dawoon*
dc.author.googleShin, Eun-Sol*
dc.author.googleKim, Eunah*
dc.author.googleKim, Dong-Wook*
dc.author.googleNoh, Yong-Young*
dc.author.googleChung, In*
dc.author.googleKim, Dong Ha*
dc.contributor.scopusid김동하(26039227400)*
dc.contributor.scopusid김동욱(57203350633)*
dc.date.modifydate20240123104500*
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자연과학대학 > 화학·나노과학전공 > Journal papers
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