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Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors
- Title
- Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors
- Authors
- Lee, Byoung Hoon; Bazan, Guillermo C.; Heeger, Alan J.
- Ewha Authors
- 이병훈
- SCOPUS Author ID
- 이병훈
![scopus](/images/layout/icon2.png)
- Issue Date
- 2016
- Journal Title
- ADVANCED MATERIALS
- ISSN
- 0935-9648
1521-4095
- Citation
- ADVANCED MATERIALS vol. 28, no. 1, pp. 57 - +
- Publisher
- WILEY-V C H VERLAG GMBH
- Indexed
- SCIE; SCOPUS
![WOS](/images/layout/wos.gif)
- Document Type
- Article
- Abstract
- Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b: 5,4-b'] dithiophen-2-yl)alt-[1,2,5] thiadiazolo-[3,4-c] pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.
- DOI
- 10.1002/adma.201504307
- Appears in Collections:
- 공과대학 > 화공신소재공학과 > Journal papers
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