DSpace at EWHA: Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

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DC Field	Value	Language
dc.contributor.author	이병훈	*
dc.date.accessioned	2019-11-19T16:30:55Z	-
dc.date.available	2019-11-19T16:30:55Z	-
dc.date.issued	2016	*
dc.identifier.issn	0935-9648	*
dc.identifier.issn	1521-4095	*
dc.identifier.other	OAK-25831	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/252037	-
dc.description.abstract	Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b: 5,4-b'] dithiophen-2-yl)alt-[1,2,5] thiadiazolo-[3,4-c] pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.	*
dc.language	English	*
dc.publisher	WILEY-V C H VERLAG GMBH	*
dc.title	Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors	*
dc.type	Article	*
dc.relation.issue	1	*
dc.relation.volume	28	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	57	*
dc.relation.lastpage	+	*
dc.relation.journaltitle	ADVANCED MATERIALS	*
dc.identifier.doi	10.1002/adma.201504307	*
dc.identifier.wosid	WOS:000367841100005	*
dc.author.google	Lee, Byoung Hoon	*
dc.author.google	Bazan, Guillermo C.	*
dc.author.google	Heeger, Alan J.	*
dc.contributor.scopusid	이병훈(57001618200)	*
dc.date.modifydate	20240527130418	*