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Studies of single atom magnets via scanning tunneling microscopy

Title
Studies of single atom magnets via scanning tunneling microscopy
Authors
Choi T.
Ewha Authors
최태영
SCOPUS Author ID
최태영scopus
Issue Date
2019
Journal Title
Journal of Magnetism and Magnetic Materials
ISSN
0304-8853JCR Link
Citation
Journal of Magnetism and Magnetic Materials vol. 481, pp. 150 - 155
Publisher
Elsevier B.V.
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Review
Abstract
In the past century, there have been revolutionary inventions and developments in both information and computational devices. The advances of nanotechnology have continued to miniaturize these devices in solid-state platforms. This trend will eventually reach the ultimate limit of single atoms and molecules. Scanning tunneling microscopy and spectroscopy (STM/STS) have been highly useful tools to investigate electronic and magnetic properties of individual atoms, molecules, and nanostructures on surfaces. Manipulating the electron spin degree of freedom at the atomic level may allow us to write, store, and read binary information of the smallest unit – atoms and molecules. At this length scale, quantum mechanics governs the behavior of individual spins and their interactions. Understanding temporal stability, accessibility, and spin lifetime at the atomic scale is essential to exploit the possibilities for using atoms and molecules as a basic unit of memory. This review introduces various STM-based research efforts toward single atom memory realization. © 2019 Elsevier B.V.
DOI
10.1016/j.jmmm.2019.03.007
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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