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Improved thermoelectric properties of n-type Bi2Te3 alloy deriving from two-phased heterostructure by the reduction of CuI with Sn
- Improved thermoelectric properties of n-type Bi2Te3 alloy deriving from two-phased heterostructure by the reduction of CuI with Sn
- Han, Mi-Kyung; Hwang, Junphil; Kim, Sung-Jin
- Ewha Authors
- 김성진; 한미경
- SCOPUS Author ID
- 김성진; 한미경
- Issue Date
- Journal Title
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS vol. 30, no. 2, pp. 1282 - 1291
- SCI; SCIE; SCOPUS
- Document Type
- In this report, CuI and Sn co-doped n-type Bi2Te3 samples have been prepared by a high-temperature solid-state reaction, and the effect of co-doping on the thermoelectric properties was investigated from room temperature to 525K. Sn single-doped and undoped Bi2Te3 were prepared for comparison. Detailed charge transport data including electrical conductivity, Seebeck coefficient, Hall coefficient, and thermal conductivity are presented. Microscopic observation of CuI/Sn co-doped samples revealed that numerous distinctive microstructures such as nanoprecipitates of the Cu and SnI-rich phase were generated in the matrix. The lattice thermal conductivity of CuI/Sn co-doped Bi2Te3 was substantially reduced compared to those of undoped and single doped Bi2Te3. Benefiting from the improved electrical transport properties by doping and the reduced lattice thermal conductivity by numerous microstructures, the ZT value of the Bi2Te3 doped with 1at.% CuI/Sn is distinctly enhanced to 1.24at 425K. The average ZT value (ZT(ave)similar to 1.02) at 300-525K was clearly higher than those of Sn-doped Bi2Te3 (ZT(ave)similar to 0.54) and CuI-doped Bi2Te3 (ZT(ave)similar to 0.98). This work indicates that the average ZT can be improved over a broad temperature range using a co-doping approach.
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