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Improved thermoelectric properties of n-type Bi2Te3 alloy deriving from two-phased heterostructure by the reduction of CuI with Sn

Title
Improved thermoelectric properties of n-type Bi2Te3 alloy deriving from two-phased heterostructure by the reduction of CuI with Sn
Authors
Han, Mi-KyungHwang, JunphilKim, Sung-Jin
Ewha Authors
김성진한미경
SCOPUS Author ID
김성진scopus; 한미경scopus
Issue Date
2019
Journal Title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN
0957-4522JCR Link

1573-482XJCR Link
Citation
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS vol. 30, no. 2, pp. 1282 - 1291
Publisher
SPRINGER
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
In this report, CuI and Sn co-doped n-type Bi2Te3 samples have been prepared by a high-temperature solid-state reaction, and the effect of co-doping on the thermoelectric properties was investigated from room temperature to 525K. Sn single-doped and undoped Bi2Te3 were prepared for comparison. Detailed charge transport data including electrical conductivity, Seebeck coefficient, Hall coefficient, and thermal conductivity are presented. Microscopic observation of CuI/Sn co-doped samples revealed that numerous distinctive microstructures such as nanoprecipitates of the Cu and SnI-rich phase were generated in the matrix. The lattice thermal conductivity of CuI/Sn co-doped Bi2Te3 was substantially reduced compared to those of undoped and single doped Bi2Te3. Benefiting from the improved electrical transport properties by doping and the reduced lattice thermal conductivity by numerous microstructures, the ZT value of the Bi2Te3 doped with 1at.% CuI/Sn is distinctly enhanced to 1.24at 425K. The average ZT value (ZT(ave)similar to 1.02) at 300-525K was clearly higher than those of Sn-doped Bi2Te3 (ZT(ave)similar to 0.54) and CuI-doped Bi2Te3 (ZT(ave)similar to 0.98). This work indicates that the average ZT can be improved over a broad temperature range using a co-doping approach.
DOI
10.1007/s10854-018-0396-z
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자연과학대학 > 화학·나노과학전공 > Journal papers
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