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Remote heteroepitaxy across graphene: Hydrothermal growth of vertical ZnO microrods on graphene-coated GaN substrate

Title
Remote heteroepitaxy across graphene: Hydrothermal growth of vertical ZnO microrods on graphene-coated GaN substrate
Authors
Jeong J.Min K.-A.Kang B.K.Shin D.H.Yoo J.Yang W.S.Lee S.W.Hong S.Hong Y.J.
Ewha Authors
이상욱신동훈
SCOPUS Author ID
이상욱scopus; 신동훈scopus
Issue Date
2018
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
Applied Physics Letters vol. 113, no. 23
Publisher
American Institute of Physics Inc.
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
Semiconductor epitaxy on two-dimensional materials is beneficial for transferrable and flexible device applications. Graphene, due to the absence of permanent electric dipoles, cannot screen the electric field coming from the opposite side surface, allowing remote epitaxy for heteroepitaxy. This study demonstrates remote heteroepitaxy of ZnO microrods (MRs) on the GaN substrate across graphene layers via hydrothermal growth. Even the use of tri-layer graphene yields the remote heteroepitaxial MR arrays. Transmission electron microscopy reveals the remote heteroepitaxial relation between ZnO MRs and the GaN substrate despite the existence of graphene interlayers in between them. Density-functional theory calculations show that charge transfer along the z-direction at graphene/c-GaN possibly attract adatoms leading to remote heteroepitaxy, implying the field permeability of graphene. The ability of graphene to be released from the host substrate is exploited to exfoliate the overlayer MRs and regenerate the substrate. © 2018 Author(s).
DOI
10.1063/1.5064542
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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