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Near-Infrared Electroluminescence and Low Threshold Amplified Spontaneous Emission above 800 nm from a Thermally Activated Delayed Fluorescent Emitter

Title
Near-Infrared Electroluminescence and Low Threshold Amplified Spontaneous Emission above 800 nm from a Thermally Activated Delayed Fluorescent Emitter
Authors
Ye, HaoKim, Dae HyeonChen, XiankaiSandanayaka, Atula S. D.Kim, Jong UkZaborova, ElenaCanard, GabrielTsuchiya, YouichiChoi, Eun YoungWu, Jeong WeonFages, FredericBredas, Jean-LucD'Aleo, AnthonyRibierre, Jean-CharlesAdachi, Chihaya
Ewha Authors
우정원
SCOPUS Author ID
우정원scopus
Issue Date
2018
Journal Title
CHEMISTRY OF MATERIALS
ISSN
0897-4756JCR Link

1520-5002JCR Link
Citation
CHEMISTRY OF MATERIALS vol. 30, no. 19, pp. 6702 - 6710
Publisher
AMER CHEMICAL SOC
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
Near-infrared (NIR) organic light-emitting devices have aroused increasing interest because of their potential applications such as information secured displays, photodynamic therapy, and optical telecommunication. While thermally activated delayed fluorescent (TADF) emitters have been used in a variety of high-performance organic light-emitting diodes (OLEDs) emitting in the visible spectral range, efficient NIR TADF materials have been rarely reported. Herein, we designed and synthesized a novel solution-processable NIR TADF dimeric borondifluoride curcuminoid derivative with remarkable photo physical, electroluminescence and amplified spontaneous emission properties. This dye was specifically developed to shift the emission of borondifluoride curcuminoid moiety toward longer wavelengths in the NIR region while keeping a high photoluminescence quantum yield. The most efficient OLED fabricated in this study exhibits a maximum external quantum efficiency of 5.1% for a maximum emission wavelength of 758 nm, which ranks among the highest performance for NIR electroluminescence. In addition, this NIR TADF emitter in doped thin films displays amplified spontaneous emission above 800 nm with a threshold as low as 7.5 mu J/cm(2), providing evidence that this material is suitable for the realization of high-performance NIR organic semiconductor lasers.
DOI
10.1021/acs.chemmater.8b02247
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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