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Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer
- Title
- Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer
- Authors
- Kim, Hogyoung; Cho, Yunae; Kim, Dong-Wook; Kim, Dong Ha; Kim, Yong; Choi, Byung Joon
- Ewha Authors
- 김동욱
- SCOPUS Author ID
- 김동욱
- Issue Date
- 2018
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- ISSN
- 0374-4884
1976-8524
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY vol. 73, no. 3, pp. 349 - 354
- Keywords
- GaN; Atomic layer deposition; Surface states; Barrier height
- Publisher
- KOREAN PHYSICAL SOC
- Indexed
- SCIE; SCOPUS; KCI
- Document Type
- Article
- Abstract
- The temperature-dependent electrical properties of Au/GaN Schottky diodes with an Al2O3 layer prepared by using atomic layer deposition (ALD) were investigated. Compared to the Au/GaN junction, the Au/Al2O3/GaN junction was found to have lower barrier heights and higher ideality factors. For the Au/GaN junction, the native oxide and the thin surface barrier formed by surface states caused a large leakage current and a small capacitance. Due to surface passivation through the ALD process, the leakage current for the Au/Al2O3/GaN junction was reduced. The barrier height reduction for the Au/Al2O3/GaN junction was associated with interface dipole formation at the Al2O3/GaN interface.
- DOI
- 10.3938/jkps.73.349
- Appears in Collections:
- 자연과학대학 > 물리학전공 > Journal papers
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