Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.date.accessioned | 2018-12-07T16:30:47Z | - |
dc.date.available | 2018-12-07T16:30:47Z | - |
dc.date.issued | 2017 | * |
dc.identifier.issn | 1533-4880 | * |
dc.identifier.other | OAK-20555 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/247428 | - |
dc.description.abstract | A new method for determining the acceptor-/donor-like density of states (DOS) over the entire bandgap using both the measured multi-frequency capacitance-voltage characteristics and the differential ideality factor in n-/p-Type low-Temperature polycrystalline-silicon thin-film transistors (LTPS TFTs) is proposed and verified. The density of deep states as a function of the gate voltage (Vgs) is obtained using the differential ideality factor, which is calculated from the transfer curves. The density of tail states as a function of Vgs is obtained using the subgap DOS-induced capacitance (CLOC), which is calculated from the multi-frequency capacitance-voltage and resistance-voltage characteristics. The relationship between Vgs and energy, which is used to convert the DOS as a function of Vgs into the distribution of the DOS as a function of energy for device simulation, is defined using the frequency-independent gate capacitance (CG), composed of the gate oxide capacitance (COX), CLOC and the free-carrier charge induced capacitance (CFREE). The device simulation results using the acceptor-/donor-like DOS obtained by the new method for n-/p-Type LTPS TFTs exhibit excellent agreement with the measured data. © Copyright 2017 American Scientific Publishers All rights reserved. | * |
dc.language | English | * |
dc.publisher | American Scientific Publishers | * |
dc.subject | Density of States | * |
dc.subject | Low-Temperature Polycrystalline-Silicon Thin-Film Transistors | * |
dc.title | A new method for determining the Subgap Density of States in n-/p-Type Low-Temperature polycrystalline-silicon thin-film transistors | * |
dc.type | Article | * |
dc.relation.issue | 5 | * |
dc.relation.volume | 17 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 2951 | * |
dc.relation.lastpage | 2958 | * |
dc.relation.journaltitle | Journal of Nanoscience and Nanotechnology | * |
dc.identifier.doi | 10.1166/jnn.2017.14028 | * |
dc.identifier.wosid | WOS:000397855000013 | * |
dc.identifier.scopusid | 2-s2.0-85015445501 | * |
dc.author.google | Lee I. | * |
dc.author.google | Kim M. | * |
dc.author.google | Shin M.-H. | * |
dc.author.google | Shin H. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.date.modifydate | 20240322125227 | * |