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Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering
- Title
- Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering
- Authors
- Park G.S.; Chu V.B.; Kim B.W.; Kim D.-W.; Oh H.-S.; Hwang Y.J.; Min B.K.
- Ewha Authors
- 김동욱
- SCOPUS Author ID
- 김동욱
- Issue Date
- 2018
- Journal Title
- ACS Applied Materials and Interfaces
- ISSN
- 1944-8244
- Citation
- ACS Applied Materials and Interfaces vol. 10, no. 12, pp. 9894 - 9899
- Publisher
- American Chemical Society
- Indexed
- SCIE; SCOPUS
- Document Type
- Article
- Abstract
- An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis. © 2018 American Chemical Society.
- DOI
- 10.1021/acsami.8b00526
- Appears in Collections:
- 자연과학대학 > 물리학전공 > Journal papers
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