Electronic structure of (GaP) n/(AlP) n superlattices

Abstract

The energy bands and the density of states of (GaP) n/(AlP) n (001) (n=1∼8) superlattices are investigated by the sp 3s*tight-binding method. We adopt the Al 0.5Ga 0.5P alloying states for the interface parameters between the GaP and the AlP layers. The calculated band gaps are compared with experimental data and with other theoretical results.