Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박성민 | * |
dc.date.accessioned | 2018-05-02T08:15:56Z | - |
dc.date.available | 2018-05-02T08:15:56Z | - |
dc.date.issued | 2004 | * |
dc.identifier.issn | 0018-9200 | * |
dc.identifier.other | OAK-2200 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/242837 | - |
dc.description.abstract | A 1-Gb/s differential transimpedance amplifier (TIA) is realized in a 0.25-μm standard CMOS technology, incorporating the regulated cascode input configuration. The TIA chip is then integrated with a p-i-n photodiode on an oxidized phosphorous-silicon (OPS) substrate by employing the multi-chip-on-oxide (MCO) technology. The MCO TIA demonstrates 80-dBΩ transimpedance gain, 670-MHz bandwidth for 1-pF photodiode capacitance, 0.54-μA average input noise current, - 17-dBm sensitivity for 10 -12 bit-error rate (BER), and 27-mW power dissipation from a single 2.5-V supply. It also shows negligible switching noise effect from an embedded VCO on the OPS substrate. Furthermore, a four-channel MCO TIA array is implemented for optical interconnects, resulting in less than - 40-dB crosstalk between adjacent channels. | * |
dc.language | English | * |
dc.title | 1-Gb/s 80-dBΩ fully differential CMOS transimpedance amplifier in multichip on oxide technology for optical interconnects | * |
dc.type | Article | * |
dc.relation.issue | 6 | * |
dc.relation.volume | 39 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 971 | * |
dc.relation.lastpage | 974 | * |
dc.relation.journaltitle | IEEE Journal of Solid-State Circuits | * |
dc.identifier.doi | 10.1109/JSSC.2004.827795 | * |
dc.identifier.wosid | WOS:000221803600014 | * |
dc.identifier.scopusid | 2-s2.0-2942689655 | * |
dc.author.google | Park S.M. | * |
dc.author.google | Lee J. | * |
dc.author.google | Yoo H.-J. | * |
dc.contributor.scopusid | 박성민(7501832231) | * |
dc.date.modifydate | 20240322125443 | * |