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Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

Title
Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory
Authors
Heo J.H.Shin D.H.Moon S.H.Lee M.H.Kim D.H.Oh S.H.Jo W.Im S.H.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2017
Journal Title
Scientific Reports
ISSN
2045-2322JCR Link
Citation
vol. 7, no. 1
Publisher
Nature Publishing Group
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ∼60 nm to ∼600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ∼60 nm crystal grain size exhibited >0.1 TB/in2 storage capacity, >600 cycles endurance, >104 s data retention time, ∼0.7 V set, and ∼-0.61 V re-set bias voltage. © 2017 The Author(s).
DOI
10.1038/s41598-017-16805-4
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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