Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 황성주 | - |
dc.date.accessioned | 2017-12-27T16:30:35Z | - |
dc.date.available | 2017-12-27T16:30:35Z | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 0957-4522 | - |
dc.identifier.other | OAK-21565 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/239329 | - |
dc.description.abstract | Tin/graphene-based composites were synthesized as easy-to-prepare alternative anode materials in lithium-ion batteries (LIBs). Reduced graphene oxide (rGO) was obtained from the oxidation of pristine graphite by modified Hummers’ method followed by thermal treatment at 500 °C for 5 h under N2 atmosphere. Nitrogen-doped graphene (NrGO) sheets were prepared via thermal annealing of rGO and melamine (1:5 by weight) at 800 °C for 1 h under N2 environment. The chemical reduction method was used to synthesize the composites. The Sn content in Sn/rGO and Sn/NrGO was varied as 10 and 20 wt%. The rGO and NrGO supporting materials had large surface areas and were exfoliated graphite structure. The powder X-ray diffraction patterns showed that Sn/rGO and Sn/NrGO composites contained Sn and graphene-based supporter. The electron microscopic measurements granted the composite morphology, in which they consisted of small Sn particles anchored on rGO and NrGO surfaces. The 20Sn/rGO and 20Sn/NrGO composites delivered large reversible specific capacities of 793 and 755 mAh g− 1, respectively, at a current density of 100 mA g− 1. The prepared composites also provide high stability, indicating the promising anode performance for LIBs. © 2017, Springer Science+Business Media, LLC. | - |
dc.language | English | - |
dc.publisher | Springer New York LLC | - |
dc.title | Nano-structure tin/nitrogen-doped reduced graphene oxide composites as high capacity lithium-ion batteries anodes | - |
dc.type | Article | - |
dc.relation.issue | 24 | - |
dc.relation.volume | 28 | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.startpage | 18994 | - |
dc.relation.lastpage | 19002 | - |
dc.relation.journaltitle | Journal of Materials Science: Materials in Electronics | - |
dc.identifier.doi | 10.1007/s10854-017-7853-y | - |
dc.identifier.wosid | WOS:000415054600080 | - |
dc.identifier.scopusid | 2-s2.0-85028820260 | - |
dc.author.google | Jarulertwathana N. | - |
dc.author.google | Laokawee V. | - |
dc.author.google | Susingrat W. | - |
dc.author.google | Hwang S.-J. | - |
dc.author.google | Sarakonsri T. | - |
dc.contributor.scopusid | 황성주(7404626171) | - |
dc.date.modifydate | 20210915135806 | - |