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Broad-Band Photocurrent Enhancement in MoS2 Layers Directly Grown on Light-Trapping Si Nanocone Arrays

Title
Broad-Band Photocurrent Enhancement in MoS2 Layers Directly Grown on Light-Trapping Si Nanocone Arrays
Authors
Cho, YunaeCho, ByungjinKim, YonghunLee, JihyeKim, EunahTrang Thi Thu NguyenLee, Ju HyunYoon, SeokhyunKim, Dong-HoChoi, Jun-hyukKim, Dong-Wook
Ewha Authors
윤석현김동욱
SCOPUS Author ID
윤석현scopus; 김동욱scopus
Issue Date
2017
Journal Title
ACS APPLIED MATERIALS & INTERFACES
ISSN
1944-8244JCR Link
Citation
vol. 9, no. 7, pp. 6314 - 6319
Keywords
MoS2photoresponsechemical vapor depositionSinanocone
Publisher
AMER CHEMICAL SOC
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
There has been growing research interest in realizing optoelectronic devices based on the two-dimensional atomically thin semiconductor MoS2 owing to its distinct physical properties that set it apart from conventional semiconductors. However, there is little optical absorption in these extremely thin MoS2 layers, which presents an obstacle toward applying them for use in high efficiency light-absorbing devices. We synthesized trilayers of MoS2 directly on SiO2/Si nanocone (NC) arrays using chemical vapor deposition and investigated their photodetection characteristics. The photoresponsivity of the MoS2/NC structure was much higher than that of the flat counterpart across the whole visible wavelength range (for example, it was almost an order of magnitude higher at lambda = 532 nm). Strongly concentrated light near the surface that originated from a Fabry-Perot interference in the SiO2 thin layers and a Mie-like resonance caused by the Si NCs boosted the optical absorption in MoS2. Our work demonstrates that MoS2/NC structures could provide a useful means to realize high-performance optoelectronic devices.
DOI
10.1021/acsami.6b15418
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자연과학대학 > 물리학전공 > Journal papers
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