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One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices

Title
One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices
Authors
Rani, AdilaVelusamy, Dhinesh BabuMota, Filipe MarquesJang, Yoon HeeKim, Richard HahnkeePark, CheolminKim, Dong Ha
Ewha Authors
김동하Adila RaniFilipe Marques Mota
SCOPUS Author ID
김동하scopus; Adila Raniscopus; Filipe Marques Motascopus
Issue Date
2017
Journal Title
ADVANCED FUNCTIONAL MATERIALS
ISSN
1616-301XJCR Link1616-3028JCR Link
Citation
vol. 27, no. 10
Keywords
active layerAu nanoparticle@graphene oxidecore-shell nanoparticlesnonvolatile memoryresistive random access memory
Publisher
WILEY-V C H VERLAG GMBH
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Nonvolatile resistive random-access memory devices based on graphene-oxide-wrapped gold nanospheres (AuNS@GO) are fabricated following a one-step room-temperature solution-process approach reported herein for the first time. The effect of the thickness of the GO layer (2, 5, and 7 nm) and the size of the synthesized AuNS (15 and 55 nm) are inspected. Reliable bistable switching is observed in the devices made from a flexible substrate and incorporating 5 and 7 nm thick GO-wrapped AuNS, sandwiched between two metal electrodes. Current-voltage measurements show bipolar switching behavior with an ON/OFF ratio of 10(3) and relatively low operating voltage (-2.5 V). The aforementioned devices unveil remarkable robustness over 100 endurance cycles and a retention of 10(3) s. Conversely, a 2 nm thick GO layer is shown to be insufficient to allow current passage from the bottom to the top electrodes. The resistive switching mechanism is demonstrated by space charge trapped limited current due to the AuNS in AuNS@GO matrix. The proposed device and methodology herein applied are expected to be attractive candidates for future generation flexible memory devices.
DOI
10.1002/adfm.201604604
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자연과학대학 > 화학·나노과학전공 > Journal papers
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