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Nonvolatile switching characteristics of laser-ablated Ge 2Sb2Te5 nanoparticles for phase-change memory applications

Title
Nonvolatile switching characteristics of laser-ablated Ge 2Sb2Te5 nanoparticles for phase-change memory applications
Authors
Suh D.-S.Lee E.Kim K.H.P.Noh J.-S.Shin W.-C.Kang Y.-S.Kim C.Khang Y.Yoon H.R.Jo W.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2007
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 90, no. 2
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Electrical characteristics of Ge2 Sb2 Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon, J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10 nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles. © 2007 American Institute of Physics.
DOI
10.1063/1.2430481
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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