Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이승준 | * |
dc.date.accessioned | 2017-01-18T02:01:35Z | - |
dc.date.available | 2017-01-18T02:01:35Z | - |
dc.date.issued | 2007 | * |
dc.identifier.issn | 0003-6951 | * |
dc.identifier.other | OAK-4306 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/234012 | - |
dc.description.abstract | The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5. © 2007 American Institute of Physics. | * |
dc.language | English | * |
dc.title | Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric | * |
dc.type | Article | * |
dc.relation.issue | 12 | * |
dc.relation.volume | 91 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | Applied Physics Letters | * |
dc.identifier.doi | 10.1063/1.2786595 | * |
dc.identifier.wosid | WOS:000249667200114 | * |
dc.identifier.scopusid | 2-s2.0-34648840566 | * |
dc.author.google | Lee K.H. | * |
dc.author.google | Choi J.-M. | * |
dc.author.google | Im S. | * |
dc.author.google | Lee B.H. | * |
dc.author.google | Im K.K. | * |
dc.author.google | Sung M.M. | * |
dc.author.google | Lee S. | * |
dc.contributor.scopusid | 이승준(36064894500;57207064952) | * |
dc.date.modifydate | 20240322125312 | * |