Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric

Abstract

The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5. © 2007 American Institute of Physics.