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Epitaxial thin films of multiferroic GaFeO3 on conducting indium tin oxide (001) buffered yttrium-stabilized zirconia (001) by pulsed laser deposition

Title
Epitaxial thin films of multiferroic GaFeO3 on conducting indium tin oxide (001) buffered yttrium-stabilized zirconia (001) by pulsed laser deposition
Authors
Trassin M.Viart N.Versini G.Loison J.-L.Vola J.-P.Schmerber G.Crgut O.Barre S.Pourroy G.Lee J.H.Jo W.Mny C.
Ewha Authors
조윌렴Christian Meny
SCOPUS Author ID
조윌렴scopus
Issue Date
2007
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 91, no. 20
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Epitaxial films of an alternative multiferroic material, GaFe O3 (GFO), were grown by pulsed laser deposition on yttrium-stabilized zirconia (001) and on conducting buffer layers of indium tin oxide (001). They present a perfect epitaxial growth along the GFO [010] axis and six crystallographic variants in the film's plane. Their magnetic properties are close to those of the bulk with an out-of-plane [010] hard direction and a Curie temperature of ∼200 K. The films did exhibit ferroelectric properties when characterized by electrostatic force microscopy. © 2007 American Institute of Physics.
DOI
10.1063/1.2813020
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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