Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.contributor.author | 이승준 | * |
dc.date.accessioned | 2017-01-05T02:01:09Z | - |
dc.date.available | 2017-01-05T02:01:09Z | - |
dc.date.issued | 2004 | * |
dc.identifier.issn | 1567-1739 | * |
dc.identifier.other | OAK-1842 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/233642 | - |
dc.description.abstract | We propose a novel sensing circuitry based on the new cell structure. Proposed sense amplifier detects small voltage difference between two MTJ's and develops it to full rail-to-rail voltage while maintaining small voltage difference on TMR cells by limiting gate voltage of the switch transistor between a pair of bit lines and a sense amplifier. The sense amplifier is small enough to fit into each column that the whole data array on selected word line is activated as in DRAMs for high-speed read-out by changing column addresses only. We verified the new sensing scheme in a 0.35 μm logic technology. © 2003 Published by Elsevier B.V. | * |
dc.language | English | * |
dc.title | A sensing circuit for MRAM based on 2MTJ-2T structure | * |
dc.type | Article | * |
dc.relation.issue | 1 | * |
dc.relation.volume | 4 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.index | KCI | * |
dc.relation.startpage | 19 | * |
dc.relation.lastpage | 24 | * |
dc.relation.journaltitle | Current Applied Physics | * |
dc.identifier.doi | 10.1016/j.cap.2003.09.007 | * |
dc.identifier.wosid | WOS:000189287700003 | * |
dc.identifier.scopusid | 2-s2.0-0742324339 | * |
dc.author.google | Jang E.-J. | * |
dc.author.google | Lee S.-Y. | * |
dc.author.google | Kim H.-J. | * |
dc.author.google | Shin H. | * |
dc.author.google | Lee S. | * |
dc.author.google | Kim D. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.contributor.scopusid | 이승준(36064894500;57207064952) | * |
dc.date.modifydate | 20240322125227 | * |