Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김동욱 | * |
dc.date.accessioned | 2017-01-05T02:01:00Z | - |
dc.date.available | 2017-01-05T02:01:00Z | - |
dc.date.issued | 2008 | * |
dc.identifier.issn | 0021-8979 | * |
dc.identifier.other | OAK-4676 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/233562 | - |
dc.description.abstract | In this study, we discuss the electrical properties of junctions consisting of metal electrodes and Nb-doped SrTi O3 (001) single crystals. The junctions formed with large work function metals (Ni, Au, Pd, and Pt) resulted in rectifying transport. A hysteretic feature was observed in the current (I) -voltage (V) and capacitance (C) -V characteristics of these junctions upon polarity reversal. The ideal Schottky-Mott rule could not explain the barrier height obtained from the I-V data, indicating the existence of interface states. Analyses of the C-V data revealed that a low dielectric constant layer existed at the interface. The interface states and layers affected the transport and the related resistance switching characteristics of the junctions. © 2008 American Institute of Physics. | * |
dc.language | English | * |
dc.title | Electrode-dependent electrical properties of metal/Nb-doped SrTi O3 junctions | * |
dc.type | Article | * |
dc.relation.issue | 5 | * |
dc.relation.volume | 103 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | Journal of Applied Physics | * |
dc.identifier.doi | 10.1063/1.2872707 | * |
dc.identifier.wosid | WOS:000254025000070 | * |
dc.identifier.scopusid | 2-s2.0-40849145743 | * |
dc.author.google | Park C. | * |
dc.author.google | Seo Y. | * |
dc.author.google | Jung J. | * |
dc.author.google | Kim D.-W. | * |
dc.contributor.scopusid | 김동욱(57203350633) | * |
dc.date.modifydate | 20240123114549 | * |