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Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes

Title
Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes
Authors
Jo S.J.Kim C.S.Kim J.B.Ryu S.Y.Noh J.H.Baik H.K.Kim Y.S.Lee S.-J.
Ewha Authors
김연상
Issue Date
2008
Journal Title
Journal of Applied Physics
ISSN
0021-8979JCR Link
Citation
vol. 103, no. 11
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF 4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes. © 2008 American Institute of Physics.
DOI
10.1063/1.2939261
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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