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Engineering performance of barristors by varying the thickness of WS2

Title
Engineering performance of barristors by varying the thickness of WS2
Authors
Choi D.-H.Lee J.-H.Kim H.-C.Lee H.-B.Jeoung N.B.Park D.-H.Kim H.Jhang S.H.Lee S.-W.Chung H.-J.
Ewha Authors
이상욱
SCOPUS Author ID
이상욱scopus
Issue Date
2017
Journal Title
Current Applied Physics
ISSN
1567-1739JCR Link
Citation
vol. 17, no. 1, pp. 11 - 14
Keywords
BarristorGrapheneScaling lawTungsten disulfide
Publisher
Elsevier B.V.
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We have investigated the performances of barristors with a graphene-tungsten disulfide (WS2) junction by varying the thickness of WS2 and gate oxide. On-current density (JON) and on- and off-current ratio (JON/JOFF) increases, and sub-threshold swing (VSS) decreases with the WS2 thickness. Also, barristors with thicker WS2 required less workfunction shift, to switch the barristors. Therefore, unlike the traditional devices, VSS of barristor with gate dielectric 300 nm was smaller than that of 90 nm, when the former is fabricated with thicker WS2 than the latter. Since materials properties of 2-dimensional semiconductors generally vary with their thickness, the thickness of 2D semiconductors could become a key parameter to engineer the performance of barristors with graphene and the 2D semiconductors. © 2016 Elsevier B.V.
DOI
10.1016/j.cap.2016.10.015
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자연과학대학 > 물리학전공 > Journal papers
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