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Near infrared organic photodetector utilizing a double electron blocking layer

Title
Near infrared organic photodetector utilizing a double electron blocking layer
Authors
Shafian S.Hwang H.Kim K.
Ewha Authors
김경곤
SCOPUS Author ID
김경곤scopus
Issue Date
2016
Journal Title
Optics Express
ISSN
1094-4087JCR Link
Citation
vol. 24, no. 22, pp. 25308 - 25316
Publisher
OSA - The Optical Society
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO3) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 × 104 at -1V, which is one order of magnitude higher than PEDOT:PSS single EBL (2.45 × 103) and three orders of magnitude higher than that of MoO3 single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 × 1011 Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO3 single EBL. © 2016 Optical Society of America.
DOI
10.1364/OE.24.025308
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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