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High photo-conversion efficiency in double-graded Cu(In,Ga)(S,Se)(2) thin film solar cells with two-step sulfurization post-treatment

Title
High photo-conversion efficiency in double-graded Cu(In,Ga)(S,Se)(2) thin film solar cells with two-step sulfurization post-treatment
Authors
Kim, Gee YeongYang, JungYupTrang Thi Thu NguyenYoon, SeokhyunNam, JunggyuLee, DonghoKim, DongseopKwon, MinsuJeon, Chan-WookKim, Yoon-KooLee, Seung-YongKim, MiyoungJo, William
Ewha Authors
조윌렴윤석현
SCOPUS Author ID
조윌렴scopus; 윤석현scopus
Issue Date
2017
Journal Title
PROGRESS IN PHOTOVOLTAICS
ISSN
1062-7995JCR Link1099-159XJCR Link
Citation
vol. 25, no. 2, pp. 139 - 148
Keywords
CIGSSe solar cellbandgap gradingKelvin probe force microscopyRaman scattering spectroscopy
Publisher
WILEY-BLACKWELL
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Sulfur is extensively used to increase the bandgap of Cu(In,Ga)(S,Se)(2) (CIGSSe) solar cells and to improve the open circuit voltage (V-OC) in order to optimize the characteristics of the devices. This study uses a sulfurization process to obtain a double-graded bandgap profile. Selenization was carried out on Cu(In,Ga) precursors, followed by one sulfurization process or two consecutive sulfurization processes on top of the CIGSe absorber layer surface. The optimum two-step sulfurization process provides an increase of V-OC of 0.05V and an improvement of conversion efficiency of 1.17%. The efficiency of the 30x30cm(2) monolithic module, which has 64 CIGS cells connected in series (aperture area: 878.6cm(2)), is 15.85%. The optical and electrical properties of the phase and the work function distribution were investigated using the depth profiles of the absorber layer as a function of the sulfurization conditions. The CIGSSe thin film formed by two-step sulfurization with a high sulfur concentration exhibits a single work function peak, better crystallinity, and higher conversion efficiency than those of the thin film formed by two-step sulfurization at low sulfur concentration. In terms of the Raman spectra depth profile, the phase areas for the CIGSSe thin film that underwent the optimized high sulfur concentration two-step-sulfurization appeared to have less of Cu2-xSe phase than that with low sulfur concentration. Consequently, surface and interface phase analysis is an essential consideration to improve cell efficiency. Copyright (c) 2016 John Wiley & Sons, Ltd. Copyright (c) 2016 John Wiley & Sons, Ltd.
DOI
10.1002/pip.2833
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자연과학대학 > 물리학전공 > Journal papers
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