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Sulfur to oxygen substitution in BiOCuSe and its effect on the thermoelectric properties

Title
Sulfur to oxygen substitution in BiOCuSe and its effect on the thermoelectric properties
Authors
Han, Mi-KyungJin, Ying-ShiYu, Byung KyuChoi, WoongjinYou, Tae-SooKim, Sung-Jin
Ewha Authors
김성진한미경
SCOPUS Author ID
김성진scopus; 한미경scopus
Issue Date
2016
Journal Title
JOURNAL OF MATERIALS CHEMISTRY A
ISSN
2050-7488JCR Link2050-7496JCR Link
Citation
vol. 4, no. 36, pp. 13859 - 13865
Publisher
ROYAL SOC CHEMISTRY
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The effects of S doping at the oxygen site on the thermoelectric properties of BiOCuSe have been investigated. The partial substitution of S ions at the O sites of BiOCuSe was achieved by sulfurization using CS2 gas. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained after sulfurization. Substitution of O with S leads to an increase in the lattice parameters and a decrease in the band gap. The electrical conductivity rises due to the increase of the electronic contribution with doping. S-doped BiOCuSe materials behave as a p-type semiconductor. The thermoelectric properties of S-doped BiOCuSe materials can be understood through the analysis of the electronic band structure and the density of states close to the Fermi level. The substitution of O sites with S provides possible directions toward the enhancement of the thermoelectric figure of merit of oxide materials with low electrical conductivity.
DOI
10.1039/c6ta04310k
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자연과학대학 > 화학·나노과학전공 > Journal papers
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