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dc.contributor.author박성민*
dc.date.accessioned2016-09-23T01:09:19Z-
dc.date.available2016-09-23T01:09:19Z-
dc.date.issued2004*
dc.identifier.issn0271-4310*
dc.identifier.otherOAK-17942*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/232295-
dc.description.abstractA four-channel transimpedance amplifier array is realized in a 0.8μm Si/SiGe HBT technology for parallel optical interconnect applications. Measured results demonstrate that each channel provides the bandwidth of 3.9GHz, the transimpedance gain of 62dBΩ, and the average noise current spectral density of 7.5 pA/ √Hz. The array achieves less than -25dB crosstalk between adjacent channels and dissipates 40mW in total from ±2.5V supply.*
dc.description.sponsorshipInstitute of Electrical and Electronics Engineers, IEEE;IEEE Cirquits and Systems Society*
dc.languageEnglish*
dc.titleFour-channel SiGe transimpedance amplifier array for parallel optical interconnects*
dc.typeConference Paper*
dc.relation.volume4*
dc.relation.indexSCOPUS*
dc.relation.startpageIV*
dc.relation.lastpage213-IV-216*
dc.relation.journaltitleProceedings - IEEE International Symposium on Circuits and Systems*
dc.identifier.scopusid2-s2.0-4344688083*
dc.author.googlePark S.M.*
dc.contributor.scopusid박성민(7501832231)*
dc.date.modifydate20240322125443*
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공과대학 > 전자전기공학전공 > Journal papers
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