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dc.contributor.author한승우-
dc.date.accessioned2016-08-29T11:08:55Z-
dc.date.available2016-08-29T11:08:55Z-
dc.date.issued2009-
dc.identifier.issn1098-0121-
dc.identifier.otherOAK-5742-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/231980-
dc.description.abstractIn order to establish the density and spatial distribution of charge carriers intrinsic to the n -type LaAlO3 -SrTiO3 heterointerface, we carry out first-principles calculations on the (LaAlO3) n (SrTiO3) 15 slab model with n=2-10. As the thickness of the LaAlO3 layer increases, the charge transfer from LaAlO3 to SrTiO3 converges to half an electron per two-dimensional unit cell. It is found that the electrons in the conduction band of SrTiO3 consist of various types of interface-bound states. The mobile electrons evaluated by excluding those states tightly bound to the interface within 2 nm or having large effective masses are in good agreement with the experimental carrier densities for all LaAlO3 thicknesses, suggesting that the loosely bound states play a major role in the transport property. A large calculation including up to (LaAlO3) 5 (SrTiO3) 30 shows that about 70% of electrons are confined within 3 nm from the interface, which is in good comparison with the experiments. It is found that the transferred electrons decay exponentially at short distances from the interface, but there is a crossover to an algebraically decaying region at ∼4nm. © 2009 The American Physical Society.-
dc.languageEnglish-
dc.titleDensity and spatial distribution of charge carriers in the intrinsic n -type LaAlO3 -SrTiO3 interface-
dc.typeArticle-
dc.relation.issue24-
dc.relation.volume79-
dc.relation.indexSCI-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.journaltitlePhysical Review B - Condensed Matter and Materials Physics-
dc.identifier.doi10.1103/PhysRevB.79.245411-
dc.identifier.wosidWOS:000267699700118-
dc.identifier.scopusid2-s2.0-67650091288-
dc.author.googleSon W.-J.-
dc.author.googleCho E.-
dc.author.googleLee B.-
dc.author.googleLee J.-
dc.author.googleHan S.-
dc.contributor.scopusid한승우(55557541900)-
dc.date.modifydate20211210152321-


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