DSpace at EWHA: Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures

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DC Field	Value	Language
dc.contributor.author	김동욱	*
dc.date.accessioned	2016-08-29T11:08:35Z	-
dc.date.available	2016-08-29T11:08:35Z	-
dc.date.issued	2009	*
dc.identifier.issn	0003-6951	*
dc.identifier.other	OAK-5333	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/231874	-
dc.description.abstract	Ag/NiO/Pt structures did (did not) exhibit reproducible resistive switching when a positive bias was applied to the Pt (Ag) electrode. X-ray photoemission spectra revealed that ultrathin NiO films on Pt (Ag) layers did (did not) undergo reversible chemical state change during heat treatment in a vacuum and oxygen ambient. Such differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors. © 2009 American Institute of Physics.	*
dc.language	English	*
dc.title	Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures	*
dc.type	Article	*
dc.relation.issue	2	*
dc.relation.volume	94	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.journaltitle	Applied Physics Letters	*
dc.identifier.doi	10.1063/1.3072800	*
dc.identifier.wosid	WOS:000262534900060	*
dc.identifier.scopusid	2-s2.0-58349122337	*
dc.author.google	Phark S.H.	*
dc.author.google	Jung R.	*
dc.author.google	Chang Y.J.	*
dc.author.google	Noh T.W.	*
dc.author.google	Kim D.-W.	*
dc.contributor.scopusid	김동욱(57203350633)	*
dc.date.modifydate	20240123114549	*