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Abnormal resistance switching behaviours of NiO thin films: Possible occurrence of both formation and rupturing of conducting channels

Title
Abnormal resistance switching behaviours of NiO thin films: Possible occurrence of both formation and rupturing of conducting channels
Authors
Liu C.Chae S.C.Lee J.S.Chang S.H.Lee S.B.Kim D.-W.Jung C.U.Seo S.Ahn S.-E.Kahng B.Noh T.W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2009
Journal Title
Journal of Physics D: Applied Physics
ISSN
0022-3727JCR Link
Citation
vol. 42, no. 1
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We report a detailed study on the abnormal resistance switching behaviours observed in NiO thin films which show unipolar resistance switching phenomena. During the RESET process, in which the NiO film changed from a low resistance state to a high resistance state, we sometimes observed that the resistance became smaller than the initial value. We simulated the resistance switching by using a random circuit breaker network model. We found that local conducting channels could be formed as well as ruptured during the RESET process, which result in the occurrence of such abnormal switching behaviours. © 2009 IOP Publishing Ltd.
DOI
10.1088/0022-3727/42/1/015506
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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