DSpace at EWHA: Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water

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DC Field	Value	Language
dc.contributor.author	김동욱	*
dc.date.accessioned	2016-08-29T12:08:40Z	-
dc.date.available	2016-08-29T12:08:40Z	-
dc.date.issued	2016	*
dc.identifier.issn	2045-2322	*
dc.identifier.other	OAK-18446	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/231470	-
dc.description.abstract	We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.	*
dc.language	English	*
dc.publisher	Nature Publishing Group	*
dc.title	Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water	*
dc.type	Article	*
dc.relation.volume	6	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.journaltitle	Scientific Reports	*
dc.identifier.doi	10.1038/srep23621	*
dc.identifier.wosid	WOS:000373322500001	*
dc.identifier.scopusid	2-s2.0-84963647569	*
dc.author.google	Connell J.G.	*
dc.author.google	Nichols J.	*
dc.author.google	Gruenewald J.H.	*
dc.author.google	Kim D.-W.	*
dc.author.google	Seo S.S.A.	*
dc.contributor.scopusid	김동욱(57203350633)	*
dc.date.modifydate	20240123114549	*