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Photoheat-induced Schottky nanojunction and indirect Mott transition in VO2: Photocurrent analysis

Title
Photoheat-induced Schottky nanojunction and indirect Mott transition in VO2: Photocurrent analysis
Authors
Kim H.-T.Kim M.Sohn A.Slusar T.Seo G.Cheong H.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2016
Journal Title
Journal of Physics Condensed Matter
ISSN
0953-8984JCR Link
Citation
vol. 28, no. 8
Keywords
metal-insulator transitionMott transitionSchottky junctionVO2
Publisher
Institute of Physics Publishing
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
In order to elucidate a mechanism of the insulator-to-metal transition (IMT) for a Mott insulator VO2 (3d 1), we present Schottky nanojunctions and the structural phase transition (SPT) by simultaneous nanolevel measurements of photocurrent and Raman scattering in microlevel devices. The Schottky nanojunction with the monoclinic metallic phase between the monoclinic insulating phases is formed by the photoheat-induced IMT not accompanied with the SPT. The temperature dependence of the Schottky junction reveals that the Mott insulator has an electronic structure of an indirect subband between the main Hubbard d bands. The IMT as reverse process of the Mott transition occurs by temperature-induced excitation of bound charges in the indirect semiconductor band, most likely formed by impurities such as oxygen deficiency. The metal band (3d 1) for the Mott insulator is screened (trapped) by the indirect band (impurities). © 2016 IOP Publishing Ltd.
DOI
10.1088/0953-8984/28/8/085602
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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