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Effects of the compositional ratio distribution with sulfurization temperatures in the absorber layer on the defect and surface electrical characteristics of Cu2ZnSnS4 solar cells

Title
Effects of the compositional ratio distribution with sulfurization temperatures in the absorber layer on the defect and surface electrical characteristics of Cu2ZnSnS4 solar cells
Authors
Yang K.-J.Sim J.-H.Son D.-H.Kim D.-H.Kim G.Y.Jo W.Song S.Kim J.H.Nam D.Cheong H.Kang J.-K.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2015
Journal Title
Progress in Photovoltaics: Research and Applications
ISSN
1062-7995JCR Link
Citation
vol. 23, no. 12, pp. 1771 - 1784
Keywords
absorber layerCZTSdefectsolar cellsurface currentsurface potential
Publisher
John Wiley and Sons Ltd
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Although Cu2ZnSnS4 (CZTS) has attracted attention as an alternative absorber material to replace CuInGaSe2 (CIGS) in solar cells, the current level of understanding of its characteristic loss mechanisms is not sufficient for achieving high power conversion efficiency. In this study, which aimed to minimize the characteristic losses across the devices, we examined the relations between the compositional ratio distribution in the absorber layer, subsequent defect formation, and surface electrical characteristics. A high-temperature sulfurization process was used to improve the crystallinity of the absorber layer, which increased the uniformity of the compositional ratio distribution and consequently suppressed the formation of a ZnS secondary phase on the CZTS/MoS2 interface. Because defects and defect clusters generated in the absorber layer are shallower when the compositional ratio distribution is uniform, the electron-hole recombination loss is reduced. These characteristics were confirmed by measuring the defect energy level using admittance spectroscopy and by analyzing the surface potential and current characteristics. These measurements revealed that improving the compositional ratio distribution suppresses the formation of deep-level defects and reduces the rate of carrier recombination. In addition, improving the compositional ratio distribution substantially contributes to improving the series resistance and short circuit current density characteristics. Copyright © 2015 John Wiley & Sons, Ltd.
DOI
10.1002/pip.2619
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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