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Room-temperature polarization switching and antiferromagnetic coupling in epitaxial (Ga,Fe)2O3/SrRuO3 heterostructures

Title
Room-temperature polarization switching and antiferromagnetic coupling in epitaxial (Ga,Fe)2O3/SrRuO3 heterostructures
Authors
Oh S.H.Lee J.H.Shin R.H.Shin Y.Meny C.Jo W.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2015
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 106, no. 14
Publisher
American Institute of Physics Inc.
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Room-temperature reversible remnant polarization of gallium ferrite thin-films is reported as a multiferroic material with non-zero order parameters of polarization and magnetization. With the addition of Fe ions in Ga sites, Ga0.6Fe1.4O3 (GFO) thin films have been considered as potentially promising of multiferroicity. The b-axis oriented epitaxial GFO films were grown on SrRuO3(111)/SrTiO3(111). The six-fold symmetric in-plane epitaxy of the GFO films was confirmed using X-ray diffraction. The magnetic moment of the films was measured as a function of temperature and external magnetic field, which shows a room-temperature non-zero magnetization. Macroscopic and microscopic methods have been applied to demonstrate the polarization switching of the films. The remnant polarization is measured as 0.05 μC/cm2. Reduction of leaky behaviors of the GFO films owing to the conducting oxide of SrRuO3 will pave a way to take advantage of the room-temperature non-zero multi-orders for future non-volatile memory device applications. © 2015 AIP Publishing LLC.
DOI
10.1063/1.4917249
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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