Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 윤석현 | * |
dc.date.accessioned | 2016-08-28T11:08:03Z | - |
dc.date.available | 2016-08-28T11:08:03Z | - |
dc.date.issued | 2009 | * |
dc.identifier.issn | 0374-4884 | * |
dc.identifier.other | OAK-13287 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/229306 | - |
dc.description.abstract | We review resonant Raman scattering studies of GaAs1-xN x, where nitrogen impurities are spatially localized in the host GaAs. The conventional intensity resonance could provide symmetry information regarding nitrogen-induced states, such as E+, which turned out to have significant components of an L and an X character, in addition to a Y character. We also observed the rather unusual and distinctive phonon linewidth resonance due to spatially locaUzed intermediate states that originated from a splitting of the L-point conduction band. We show that the resonant Raman scattering response, including asymmetric linewidth broadening resonances, can provide a powerful means to study semiconductor systems with strongly localized impurity states. | * |
dc.language | English | * |
dc.title | Resonant Raman scattering studies of localized impurity states in semiconductors | * |
dc.type | Article | * |
dc.relation.issue | 2 | * |
dc.relation.volume | 55 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.index | KCI | * |
dc.relation.startpage | 646 | * |
dc.relation.lastpage | 651 | * |
dc.relation.journaltitle | Journal of the Korean Physical Society | * |
dc.identifier.doi | 10.3938/jkps.55.646 | * |
dc.identifier.wosid | WOS:000269010500049 | * |
dc.identifier.scopusid | 2-s2.0-70349306928 | * |
dc.author.google | Yoon S. | * |
dc.contributor.scopusid | 윤석현(55732105900) | * |
dc.date.modifydate | 20231120162901 | * |