Solid State Communications vol. 97, no. 4, pp. 315 - 318
The results of energy gap variation in ternary alloy semiconductors (A1-xBxC) are reported within the tight-binding (TB) framework of Koster and Slater by universalizing TB parameters as a function of x, in which the effects of lattice relaxation and composition disorder are involved appropriately. A good agreement is obtained between the calculated results and existing experimental data.