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Electronic structure of ternary alloy semiconductors

Title
Electronic structure of ternary alloy semiconductors
Authors
Shim K.Talwar D.N.Moh H.-J.
Ewha Authors
모혜정
SCOPUS Author ID
모혜정scopus
Issue Date
1996
Journal Title
Solid State Communications
ISSN
0038-1098JCR Link
Citation
vol. 97, no. 4, pp. 315 - 318
Indexed
SCI; SCIE; SCOPUS scopus
Abstract
The results of energy gap variation in ternary alloy semiconductors (A1-xBxC) are reported within the tight-binding (TB) framework of Koster and Slater by universalizing TB parameters as a function of x, in which the effects of lattice relaxation and composition disorder are involved appropriately. A good agreement is obtained between the calculated results and existing experimental data.
DOI
10.1016/0038-1098(95)00578-1
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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