DSpace at EWHA: Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs

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DSpace at EWHA공과대학 전자전기공학전공 Journal papers

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Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs

Title: Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs

Authors: Sun W.; Shin H.

Ewha Authors: 신형순

SCOPUS Author ID: 신형순

Issue Date: 2014

Journal Title: Solid-State Electronics

ISSN: 0038-1101

Citation: Solid-State Electronics vol. 94, pp. 23 - 27

Indexed: SCI; SCIE; SCOPUS

Document Type: Article

Abstract: Biaxial strain; Electron mobility; Strained Si; Stress; Uniaxial strain

DOI: 10.1016/j.sse.2014.01.005

Appears in Collections:: 공과대학 > 전자전기공학전공 > Journal papers

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