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dc.contributor.author신형순*
dc.contributor.author이승준*
dc.date.accessioned2016-08-28T11:08:41Z-
dc.date.available2016-08-28T11:08:41Z-
dc.date.issued2014*
dc.identifier.issn0741-3106*
dc.identifier.otherOAK-11056*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/227537-
dc.description.abstractMagnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching time*
dc.languageEnglish*
dc.titleUnified analytical model for switching behavior of magnetic tunnel junction*
dc.typeArticle*
dc.relation.issue2*
dc.relation.volume35*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage193*
dc.relation.lastpage195*
dc.relation.journaltitleIEEE Electron Device Letters*
dc.identifier.doi10.1109/LED.2013.2293598*
dc.identifier.wosidWOS:000331377500015*
dc.identifier.scopusid2-s2.0-84893827437*
dc.author.googleLim H.*
dc.author.googleLee S.*
dc.author.googleShin H.*
dc.contributor.scopusid신형순(7404012125)*
dc.contributor.scopusid이승준(36064894500;57207064952)*
dc.date.modifydate20240322125227*
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공과대학 > 전자전기공학전공 > Journal papers
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