Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.contributor.author | 이승준 | * |
dc.date.accessioned | 2016-08-28T11:08:41Z | - |
dc.date.available | 2016-08-28T11:08:41Z | - |
dc.date.issued | 2014 | * |
dc.identifier.issn | 0741-3106 | * |
dc.identifier.other | OAK-11056 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/227537 | - |
dc.description.abstract | Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching time | * |
dc.language | English | * |
dc.title | Unified analytical model for switching behavior of magnetic tunnel junction | * |
dc.type | Article | * |
dc.relation.issue | 2 | * |
dc.relation.volume | 35 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 193 | * |
dc.relation.lastpage | 195 | * |
dc.relation.journaltitle | IEEE Electron Device Letters | * |
dc.identifier.doi | 10.1109/LED.2013.2293598 | * |
dc.identifier.wosid | WOS:000331377500015 | * |
dc.identifier.scopusid | 2-s2.0-84893827437 | * |
dc.author.google | Lim H. | * |
dc.author.google | Lee S. | * |
dc.author.google | Shin H. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.contributor.scopusid | 이승준(36064894500;57207064952) | * |
dc.date.modifydate | 20240322125227 | * |