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Microstructures and microwave dielectric properties of Bi2O 3-deficient Bi12 SiO20 ceramics

Title
Microstructures and microwave dielectric properties of Bi2O 3-deficient Bi12 SiO20 ceramics
Authors
Jeong B.-J.Joung M.-R.Kweon S.-H.Kim J.-S.Nahm S.Choi J.-W.Hwang S.-J.
Ewha Authors
황성주
SCOPUS Author ID
황성주scopus
Issue Date
2013
Journal Title
Journal of the American Ceramic Society
ISSN
0002-7820JCR Link
Citation
vol. 96, no. 7, pp. 2225 - 2229
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The Microstructure and microwave dielectric properties of Bi 2O3-deficient Bi12SiO20 ceramics were investigated. A small amount of unreacted Bi2O3 phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi2O3 reacted with remnant SiO2 during cooling to form a Bi4Si 3O12 secondary phase. The nominal composition of Bi 11.8SiO19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: εr = 39, Q × f = 74 000 GHz, and τf = -14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C. © 2013 The American Ceramic Society.
DOI
10.1111/jace.12323
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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