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Microstructure and microwave dielectric properties of Bi 12SiO 20 ceramics

Title
Microstructure and microwave dielectric properties of Bi 12SiO 20 ceramics
Authors
Jeong B.-J.Joung M.-R.Kweon S.-H.Kim J.-S.Nahm S.Choi J.-W.Hwang S.-J.
Ewha Authors
황성주
SCOPUS Author ID
황성주scopus
Issue Date
2012
Journal Title
Materials Research Bulletin
ISSN
0025-5408JCR Link
Citation
vol. 47, no. 12, pp. 4510 - 4513
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Bi 12SiO 20 ceramics were well sintered at 800°C after calcination at 700°C. A liquid phase of composition Bi 2O 3 was formed during the sintering at temperatures ≥800°C and assisted the densification of the Bi 12SiO 20 ceramics. When the sintering temperature exceeded 800°C, however, the relative density, ε r, and Q × f values of the Bi 12SiO 20 ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi 12SiO 20 ceramics sintered at 800°C for 5.0 h exhibited excellent microwave dielectric properties with a high ε r of 43, a high Q × f of 86,802 GHz and a small τ f of -10.39 ppm/°C. © 2012 Elsevier Ltd. All rights reserved.
DOI
10.1016/j.materresbull.2012.08.075
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자연과학대학 > 화학·나노과학전공 > Journal papers
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