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Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Title
Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent
Authors
Lee J.-W.Son D.-Y.Ahn T.K.Shin H.-W.Kim I.Y.Hwang S.-J.Ko M.J.Sul S.Han H.Park N.-G.
Ewha Authors
황성주
SCOPUS Author ID
황성주scopus
Issue Date
2013
Journal Title
Scientific Reports
ISSN
2045-2322JCR Link
Citation
vol. 3
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.
DOI
10.1038/srep01050
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자연과학대학 > 화학·나노과학전공 > Journal papers
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