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Carbon molecular beam epitaxy on various semiconductor substrates

Title
Carbon molecular beam epitaxy on various semiconductor substrates
Authors
Jerng S.K.Yu D.S.Lee J.H.Kim Y.S.Kim C.Yoon S.Chun S.H.
Ewha Authors
윤석현
SCOPUS Author ID
윤석현scopus
Issue Date
2012
Journal Title
Materials Research Bulletin
ISSN
0025-5408JCR Link
Citation
vol. 47, no. 10, pp. 2772 - 2775
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III-V (GaAs, GaN, InP), and group II-VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures. © 2012 Elsevier Ltd. All rights reserved.
DOI
10.1016/j.materresbull.2012.04.123
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자연과학대학 > 물리학전공 > Journal papers
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