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Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins

Title
Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins
Authors
Hoang M.H.Kim Y.Kim M.Kim K.H.Lee T.W.Nguyen D.N.Kim S.-J.Lee K.Lee S.J.Choi D.H.
Ewha Authors
김성진김영미
SCOPUS Author ID
김성진scopus; 김영미scopus
Issue Date
2012
Journal Title
Advanced Materials
ISSN
0935-9648JCR Link
Citation
vol. 24, no. 39, pp. 5363 - 5367
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Highly conjugated porphyrin derivatives, H2TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm2 V-1s -1. Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W-1 under a very low light intensity (5.6 m W cm-2). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
DOI
10.1002/adma.201202148
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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