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Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells

Title
Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells
Authors
Cho Y.Lee E.Kim D.-W.Ahn S.Jeong G.Y.Gwak J.Yun J.H.Kim H.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2013
Journal Title
Current Applied Physics
ISSN
1567-1739JCR Link
Citation
vol. 13, no. 1, pp. 37 - 40
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We investigated the transport and photovoltaic properties of Cu(In 1-xGa x)Se 2 (CIGS) thin-film solar cells. The shunt-current-eliminated diode current could be obtained from the current-voltage characteristics by subtracting the parasitic shunt leakage current from the total current. The temperature dependence of the open-circuit voltage, extracted from the shunt-eliminated (total) current, suggested that the recombination activation energy is comparable to (much less than) the CIGS bandgap. The low-temperature characteristics of the diode ideality factor supported bulk-dominated recombination in the same cell. This suggests that shunt-current subtraction can provide the proper diode parameters of CIGS solar cells. © 2012 Elsevier B.V. All rights reserved.
DOI
10.1016/j.cap.2012.06.006
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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