View : 16 Download: 3

Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga 0.6Fe 1.4O 3 thin films

Title
Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga 0.6Fe 1.4O 3 thin films
Authors
Lefevre C.Shin R.H.Lee J.H.Oh S.H.Roulland F.Thomasson A.Autissier E.Meny C.Jo W.Viart N.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2012
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 100, no. 26
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Ga 0.6Fe 1.4O 3 is predicted to be magnetoelectric with non zero magnetization at room temperature. However, in thin films, electric properties are overshadowed by strong leakage currents. In this Letter, we show that Mg doping in Ga 0.6Fe 1.4O 3 thin films grown by pulsed laser deposition allows decreasing the leakage current density by four orders of magnitude and might simultaneously allow tuning the carriers' nature. These results suggest the possibility to develop a new class of material exhibiting room temperature magnetization, tunable transport properties, and magnetoelectric properties. © 2012 American Institute of Physics.
DOI
10.1063/1.4729872
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
Files in This Item:
001.pdf(699.64 kB)Download
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE