View : 11 Download: 0

Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye

Title
Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye
Authors
Ribierre J.C.Sato M.Ishizuka A.Tanaka T.Watanabe S.Matsumoto M.Matsumoto S.Uchiyama M.Aoyama T.
Ewha Authors
Jean Charles Ribierre
Issue Date
2012
Journal Title
Organic Electronics: physics, materials, applications
ISSN
1566-1199JCR Link
Citation
vol. 13, no. 6, pp. 999 - 1003
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We report on the fabrication and the characterization of p-type organic field-effect transistors based on vapor-deposited J-aggregate bisazomethine dye thin films. The absorption spectra of this non-ionic organic semiconductor in the solid state show a strong influence of the film thickness on the J-aggregate formation. However, the electrical characteristics of the devices demonstrate that the hole transport properties do not vary significantly in films thicker than 100 nm. This is due to the fact that the J-aggregates are formed in this material at the surface of the crystalline grains and do not influence the semiconductor/gate dielectric interface and the charge transport properties of the devices. Hole field-effect mobilities as high as 2.4 × 10 -4 cm 2 V -1 s -1 were obtained and could be slightly improved by a solvent vapor treatment due to changes in the film crystallinity. Overall, this study demonstrates that J-aggregate bisazomethine dye thin films are good candidates for the realization of organic electronic devices. © 2012 Elsevier B.V. All rights reserved.
DOI
10.1016/j.orgel.2012.02.020
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE