Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김경곤 | * |
dc.date.accessioned | 2016-08-28T12:08:15Z | - |
dc.date.available | 2016-08-28T12:08:15Z | - |
dc.date.issued | 2012 | * |
dc.identifier.issn | 1566-1199 | * |
dc.identifier.other | OAK-8692 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/222571 | - |
dc.description.abstract | Tungsten oxide layer is formed uniformly by a sol-gel technique on top of indium tin oxide as a neutral and photo-stable hole extraction layer (HEL). The solution processed tungsten oxide layer (sWO 3) is fully characterized by UV-Vis, XPS, UPS, XRD, AFM, and TEM. Optical transmission of ITO/sWO 3 substrates is nearly identical to ITOs. In addition, the sWO 3 layer induces nearly ohmic contact to P3HT as PEDOT:PSS layer does, which is determined by UPS measurement. In case that an optimized thickness (∼10 nm) of the sWO 3 layer is incorporated in the organic photovoltaic devices (OPVs) with a structure of ITO/sWO 3/P3HT:PCBM/ Al, the power conversion efficiency (PCE) is 3.4%, comparable to that of devices utilizing PEDOT:PSS as HEL. Furthermore, the stability of OPV utilizing sWO 3 is significantly enhanced due to the air- and photo-stability of the sWO 3 layer itself. PCEs are decreased to 40% and 0% of initial values, when PEDOT:PSS layers are exposed to air and light for 192 h, respectively. In contrast, PCEs are maintained to 90% and 87% of initial PCEs respectively, when sWO 3 layers are exposed to the same conditions. Conclusively, we find that solution processed tungsten oxide layers can be prepared easily, act as an efficient hole extraction layer, and afford a much higher stability than PEDOT:PSS layers. © 2012 Elsevier B.V. All rights reserved. | * |
dc.language | English | * |
dc.title | Solution processed WO 3 layer for the replacement of PEDOT:PSS layer in organic photovoltaic cells | * |
dc.type | Article | * |
dc.relation.issue | 6 | * |
dc.relation.volume | 13 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 959 | * |
dc.relation.lastpage | 968 | * |
dc.relation.journaltitle | Organic Electronics: physics, materials, applications | * |
dc.identifier.doi | 10.1016/j.orgel.2012.01.033 | * |
dc.identifier.wosid | WOS:000302961200004 | * |
dc.identifier.scopusid | 2-s2.0-84859905267 | * |
dc.author.google | Choi H. | * |
dc.author.google | Kim B. | * |
dc.author.google | Ko M.J. | * |
dc.author.google | Lee D.-K. | * |
dc.author.google | Kim H. | * |
dc.author.google | Kim S.H. | * |
dc.author.google | Kim K. | * |
dc.contributor.scopusid | 김경곤(7409321823) | * |
dc.date.modifydate | 20240220113038 | * |