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Molecular-beam epitaxially grown MgB 2 thin films and superconducting tunnel junctions

Title
Molecular-beam epitaxially grown MgB 2 thin films and superconducting tunnel junctions
Authors
Laloe J.-B.Kim T.H.Moodera J.S.
Ewha Authors
김태희
SCOPUS Author ID
김태희scopus
Issue Date
2011
Journal Title
Advances in Condensed Matter Physics
ISSN
1687-8108JCR Link
Citation
vol. 2011
Indexed
SCIE; SCOPUS WOS scopus
Abstract
Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a T C of 39K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications. Copyright © 2011 Jean-Baptiste Lalo et al.
DOI
10.1155/2011/989732
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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